Solid-state image sensing device and image sensing system

ABSTRACT

A solid-state image sensing device comprises a first readout circuit configured to read out a signal from a pixel array including a plurality of pixels, a signal holding unit configured to hold the signal read out from the first readout circuit, a second readout circuit configured to read out the signal held in the signal holding unit, and a current control unit configured to control an electric current flowing through at least part of the first readout circuit while the first readout circuit reads out the signal. The current control unit controls an electric current flowing through the at least part of the first readout circuit in a moving image capturing mode to be smaller than an electric current flowing through the at least part of the first readout circuit in a still image capturing mode.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a solid-state image sensing device andan image sensing system and, more particularly, to a solid-state imagesensing device which can capture a moving image and a still image and animage sensing system having the same.

2. Description of the Related Art

A digital camera using a solid-state image sensing device which cancapture both a still image and a moving image has become popularnowadays. To meet a demand for still image capturing with high imagequality/high resolution, information on pixels in a number larger thanthat of pixels read out in moving image capturing is necessary. Althoughmoving image capturing requires pixels fewer than those in still imagecapturing, a specific number of frames (e.g., 30 frames per secondaccording to the NTSC standard) need to be recorded in one second. Forthis purpose, moving image capturing generally consumes a relativelylarge power. To cope with this, there is a method of reducing the powerconsumption by thinning upon reading out pixels from a solid-state imagesensing device or dropping the readout clock rate in the moving imagecapturing mode (Japanese Patent Laid-Open No. 2004-158958).

However, the number of pixels to be read out is specified by the readoutstandard in moving image readout (moving image capturing), so thethinning ratio cannot deviate from the readout standard. If the clockrate is dropped in moving image readout, it is necessary to provide anoscillator for generating a still image readout clock and an oscillatorfor generating a moving image readout clock. It is also necessary toprovide a complicated circuit to prevent any trouble upon frequencyswitching.

SUMMARY OF THE INVENTION

The present invention has been made in consideration of theabove-described problems, and has as its object to suppress the powerconsumption in the moving image capturing mode without changing, e.g.,the clock rate between the moving image capturing mode and the stillimage capturing mode.

According to the first aspect of the present invention, there isprovided a solid-state image sensing device which can capture a movingimage and a still image, comprising a first readout circuit configuredto read out a signal from a pixel array including a plurality of pixels,a signal holding unit configured to hold the signal read out from thefirst readout circuit, a second readout circuit configured to read outthe signal held in the signal holding unit, and a current control unitconfigured to control an electric current flowing through at least partof the first readout circuit while the first readout circuit reads outthe signal, wherein the current control unit controls an electriccurrent flowing through the at least part of the first readout circuitin a moving image capturing mode to be smaller than an electric currentflowing through the at least part of the first readout circuit in astill image capturing mode.

According to the second aspect of the present invention, there isprovided a solid-state image sensing device which can capture a movingimage and a still image, comprising a pixel array including a pluralityof pixels, a vertical scanning circuit configured to select a row of thepixel array, a horizontal scanning circuit configured to select a columnof the pixel array, a plurality of first amplification circuitsconfigured to amplify signals from the pixel array, a plurality ofconstant current sources configured to determine electric currentsflowing through the plurality of first amplification circuits, aplurality of signal holding units configured to hold the signals fromthe plurality of first amplification circuits, a plurality of switchesconfigured to transfer the signals, which are held in the plurality ofsignal holding units, in accordance with a signal sent from thehorizontal scanning circuit, a second amplification circuit configuredto amplify the signals transferred by the plurality of switches andoutput the amplified signals, and a current control unit configured tocontrol the electric currents flowing through the plurality of constantcurrent sources, wherein the current control unit controls an electriccurrent flowing through each of the constant current sources in a movingimage capturing mode to be smaller than an electric current flowingthrough each of the constant current sources in a still image capturingmode, so that each of the first amplification circuits operates with alower driving capability in the moving image capturing mode than in thestill image capturing mode.

According to the third aspect of the present invention, there isprovided a solid-state image sensing device which can capture a movingimage and a still image, comprising a pixel array including a pluralityof pixels, a vertical scanning circuit configured to select a row of thepixel array, a horizontal scanning circuit configured to select a columnof the pixel array, a plurality of column signal lines to which signalsfrom the pixel array are output, a plurality of constant current sourceseach of which are connected between the ground and a corresponding oneof the plurality of column signal lines, and a current control unitconfigured to control electric currents flowing through the plurality ofconstant current sources, wherein the current control unit controls anelectric current flowing through each of the constant current sources ina moving image capturing mode to be smaller than an electric currentflowing through each of the constant current sources in a still imagecapturing mode.

According to the fourth aspect of the present invention, there isprovided a solid-state image sensing device which can capture a movingimage and a still image, comprising a pixel array including a pluralityof pixels, a vertical scanning circuit configured to select a row of thepixel array, a horizontal scanning circuit configured to select a columnof the pixel array, a plurality of column signal lines to which signalsfrom the pixel array are output, a plurality of first amplificationunits configured to amplify the signals output from the pixel array tothe plurality of column signal lines, a plurality of signal holdingunits configured to hold the signals from the plurality of firstamplification units, a plurality of switches configured to transfer thesignals, which are held in the plurality of signal holding units, inaccordance with a signal sent from the horizontal scanning circuit, asecond amplification unit configured to amplify the signals transferredby the plurality of switches and output the amplified signals, aplurality of bypass routes configured to bypass the plurality of firstamplification units between the plurality of column signal lines and theplurality of signal holding units, and a control unit configured todeactivate the first amplification units and bypass the firstamplification units via the bypass routes in a moving image capturingmode, and to activate the first amplification units and shut off thebypass routes in a still image capturing mode.

According to the fifth aspect of the present invention, there isprovided an image sensing system comprising a solid-state image sensingdevice as defined above, and a signal processing unit configured toprocess a signal output from the solid-state image sensing device.

According to the present invention, it is possible to suppress the powerconsumption in the moving image capturing mode without changing, e.g.,the clock rate between the moving image capturing mode and the stillimage capturing mode.

Further features of the present invention will become apparent from thefollowing description of exemplary embodiments with reference to theattached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing the schematic arrangement of asolid-state image sensing device according to the first embodiment ofthe present invention;

FIG. 2 is a circuit diagram illustrating an example of the detailedarrangement of the solid-state image sensing device shown in FIG. 1;

FIG. 3 is a timing chart illustrating an example of the operation of thesolid-state image sensing device according to the first embodiment ofthe present invention;

FIG. 4 is a circuit diagram showing the schematic arrangement of asolid-state image sensing device according to the second embodiment ofthe present invention;

FIG. 5 is a timing chart illustrating an example of the operation of thesolid-state image sensing device according to the second embodiment ofthe present invention;

FIG. 6 is a circuit diagram showing the schematic arrangement of asolid-state image sensing device according to the third embodiment ofthe present invention;

FIG. 7 is a timing chart illustrating an example of the operation of thesolid-state image sensing device according to the third embodiment ofthe present invention;

FIG. 8 is a circuit diagram showing the schematic arrangement of asolid-state image sensing device according to the fourth embodiment ofthe present invention;

FIG. 9 is a timing chart illustrating an example of the operation of thesolid-state image sensing device according to the fourth embodiment ofthe present invention; and

FIG. 10 is a block diagram showing the schematic configuration of animage sensing system according to a preferred embodiment of the presentinvention.

DESCRIPTION OF THE EMBODIMENTS

Preferred embodiments of the present invention will be described belowwith reference to the accompanying drawings.

A solid-state image sensing device according to a preferred embodimentof the present invention can capture a moving image and a still image.This solid-state image sensing device can be suitably mounted in adigital camera which captures an object image as an electrical signal,and thereby records the image on a memory medium, displays the image ona display device (e.g., a liquid crystal display device), or transmitsthe image to other devices.

FIG. 1 is a block diagram showing the schematic arrangement of asolid-state image sensing device according to the first embodiment ofthe present invention. The solid-state image sensing device comprises apixel array A, vertical scanning circuit 104, first readout circuits(column readout circuits) 120, signal holding units 107, switches 109,horizontal scanning circuit 108, second readout circuit 130, and currentcontrol unit 112.

The pixel array A is formed by two-dimensionally arraying a plurality ofpixel units 101 into a plurality of rows and a plurality of columns. Forthe sake of descriptive simplicity, a pixel array A is formed by 3×3pixel units 101 in FIG. 1. However, the arrangement of the pixel array Ais not particularly limited to this.

The first readout circuit 120 reads out a signal from the pixel array A,and can include, e.g., a column signal line 102, first amplificationunit 106, and constant current source 105. The signal holding unit 107holds the signal read out by the first readout circuit 120. The secondreadout circuit 130 reads out the signal held in the signal holding unit107 via the switch 109, and can include, e.g., a second amplificationunit 110. The first amplification unit 106 and signal holding unit 107can be set for every other column or every plurality of columns.

The vertical scanning circuit 104 typically includes a shift registerand selects a row in the pixel array A. The horizontal scanning circuit108 typically includes a shift register and selects a column in thepixel array A. In this example, a column in the pixel array A can beselected by selectively activating the switch 109 so that the signal istransferred from the signal holding unit 107 to the second readoutcircuit 130.

The current control unit 112 controls an electric current flowingthrough at least part of the first readout circuit 120 while the firstreadout circuit 120 reads out the signal. The current control unit 112controls an electric current flowing through the at least part of thefirst readout circuit 120 in the moving image capturing mode to besmaller than that flowing through the at least part of the first readoutcircuit 120 in the still image capturing mode.

In the solid-state image sensing device according to this embodiment,the second readout circuit 130 (second amplification unit 110) outputsan image signal at the same clock rate in moving image capturing andstill image capturing.

FIG. 2 is a circuit diagram showing an example of the detailedarrangement of the pixel unit 101, first amplification unit 106 (firstreadout circuit 120), signal holding unit 107, and current control unit112. FIG. 3 is a timing chart illustrating an example of the operationof the solid-state image sensing device shown in FIGS. 1 and 2.

The pixel unit 101 can include, e.g., a photodiode (photoelectricconversion unit) 201, transfer transistor 202, amplification transistor(source follower transistor) 203, reset transistor 204, and selectiontransistor 205. An electric charge generated by photoelectric conversionin the photodiode 201 is transferred to a floating diffusion (to bereferred to as an FD hereinafter) 217 by the transfer transistor 202.The potential of the FD 217 is determined in accordance with thiselectric charge. The FD 217 is a node common to the gate of theamplification transistor 203. A signal based on the electric chargetransferred to the FD 217 is amplified by the amplification transistor203 and output to the column signal line 102 via the selectiontransistor 205. The column signal line 102 is connected to the constantcurrent source 105 to form a source follower circuit.

The first amplification unit 106 can include, e.g., a clamp capacitance206, inverting amplifier 207, feedback capacitance 208, and clamp switch209. The column signal line 102 is connected to one end of the clampcapacitance 206 of the first amplification unit 106. The feedbackcapacitance 208 and clamp switch 209 are connected in parallel betweenthe input end and output end of the inverting amplifier 207.

The output end of the first amplification unit 106 (first readoutcircuit 120) is connected to the signal holding unit 107. The signalholding unit 107 can include, e.g., switches 211 and 212 and holdingcapacitances 213 and 214. The holding capacitances 213 and 214preferably have the same capacitance value. The output end of the firstamplification unit 106 (first readout circuit 120) is connected to theholding capacitances 213 and 214 via the switches 211 and 212,respectively.

Signals held in the holding capacitances 213 and 214 are transferred tothe second amplification unit 110 (second readout circuit 130) byturning on column selection switches 215 and 216 in accordance with apulse PH sent from the horizontal scanning circuit 108. The holdingcapacitances 213 and 214 respectively hold an N output and an S output.The second amplification unit 110 amplifies the difference between the Noutput and the S output. This operation is called the CDS (CorrelatedDouble Sampling) operation.

The operation of the solid-state image sensing device will be explainedwith reference to FIG. 3. At T=t1, a selection signal PSEL input to thegate of the selection transistor 205 changes to high level. Theamplification transistor 203 is thus activated. In this state, the FD217 is reset by a reset voltage SVDD.

At T=t2, a clamp pulse PCOR changes to high level. The invertingamplifier 207 then enters a unity gain buffer state and outputs avoltage VC0R.

At T=t3, a reset signal PRES input to the gate of the reset transistor204 changes to low level. The potential of the FD 217 is then fixed toblack signal level, and a reference voltage VN of the column signal line102 is determined.

At T=t4, the clamp pulse PCOR changes to low level and the referencevoltage VN of the column signal line 102 is clamped.

At T=t5, a pulse PTN changes to high level. The switch 211 of the signalholding unit 107 is then turned on to start writing the sum of thevoltage VC0R and the offset voltage of the inverting amplifier 207 intothe holding capacitance 213. At T=t6, this write is ended.

At T=t7, a transfer pulse PTX input to the gate of the transfertransistor 202 of the pixel unit 101 changes to high level. The signalcharge of the photodiode 201 is then transferred to the FD 217. Thistransfer is completed before T=t8. At time T=t9, a pulse PTS changes tohigh level. The switch 212 of the signal holding unit 107 is then turnedon to write a signal into the holding capacitance 214.

The potential of the column signal line 102 changes from VN to VS as thetransfer pulse PTX is activated to high level. If the signal charge isan electron, VS<VN. A voltage obtained by inverting a voltage changeamount (VS−VN) by a ratio (C0/Cf) between the clamp capacitance (C0) 206and the feedback capacitance (Cf) 208, the voltage VC0R, and the offsetvoltage of the inverting amplifier 207 add up. The sum of these voltagesis written into the holding capacitance 214 via the switch 211 of thesignal holding unit 107. At T=t10, this write is ended.

At T=t11, the reset signal PRES changes to high level. The resettransistor 204 of the pixel unit 101 is then turned on to reset the ED217. At the same time, the selection signal PSEL changes to low level toturn off the selection transistor 205. With this operation, rowselection is canceled.

At T=t12, the column selection switches 215 and 216 are turned on inaccordance with a pulse PH sent from the horizontal scanning circuit108. The second amplification unit 110 calculates the difference betweenan N output and an S output, and outputs an image signal. At T=t13, thisoperation is ended and signals in the columns are sequentially output insynchronism with the pulse PH.

In this embodiment, there is no difference between the moving imagecapturing mode and the still image capturing mode except that thecurrent control unit 112 controls an electric current flowing through atleast part of the first readout circuit 120. For this reason, the clockrate of an image signal output from the second amplification unit 110 insynchronism with a pulse PH remains the same between the moving imagecapturing mode and the still image capturing mode. Normally, when thisclock rate is changed between the moving image capturing mode and thestill image capturing mode, a quartz oscillator needs to be switchedbetween the moving image capturing mode and the still image capturingmode. However, this method requires a complicated frequency switchingoperation, resulting in an increase in the number of components.

In this embodiment, the current control unit 112 controls an electriccurrent flowing through at least part (the first amplification unit 106in this embodiment) of the first readout circuit 120 in the moving imagecapturing mode to be smaller than that flowing through the at least partof the first readout circuit 120 in the still image capturing mode.

More specifically, in this embodiment, letting I1 be the magnitude of anelectric current flowing through the first amplification unit 106 in thestill image capturing mode, and I2 be the magnitude of an electriccurrent flowing through the first amplification unit 106 in the movingimage capturing mode, I1>I2.

The current control unit 112 controls the gate voltage of a constantcurrent transistor 218 of the first amplification unit 106 to control anelectric current flowing through the constant current transistor 218,i.e., an electric current flowing through the first amplification unit106. The current control unit 112 can include, e.g., a transistor 112 ahaving its gate and drain connected to each other, and the gate of thetransistor 112 a can be connected to that of the constant currenttransistor 218. With this arrangement, the constant current transistor218 is biased so that an electric current with the same magnitude asthat of an electric current flowing through the transistor 112 a flowsthrough the constant current transistor 218. Such an arrangement iscalled a current mirror circuit.

The value I1 is determined such that signal voltages can be sufficientlywritten into the holding capacitances 213 and 214 within the periodbetween time t9 and t10. The required write times are determined inaccordance with, e.g., the capacitance values of the holdingcapacitances 213 and 214, the ON resistances of the switches 211 and212, and the output impedance and inverting gain of the invertingamplifier 207. However, the driving capacity of the inverting amplifier207 is basically changed by changing a tail current flowing through theconstant current transistor 218 of the inverting amplifier 207. Thismakes it possible to change the times taken to write signal voltagesinto the holding capacitances 213 and 214.

The level at which a signal voltage is written into each of the holdingcapacitances 213 and 214 by consuming an infinite time is assumed to be100%. Letting τ be a time constant, (1−exp(5τ))=0.993, i.e., 99.3% canbe written for 5τ. In the still image capturing mode, the magnitude I1of an electric current flowing through the first amplification unit 106is determined such that a level corresponding to, e.g., 5τ is written.This makes it possible to sufficiently write signal voltages into theholding capacitances 213 and 214, thus obtaining a high-quality outputimage.

In the moving image capturing mode, the magnitude I2 of an electriccurrent flowing through the first amplification unit 106 is determinedsuch that a written signal voltage is suppressed to a levelcorresponding to 4τ, i.e., (1−exp(4τ))=0.982 (98.2%). In the movingimage capturing mode, the output amplitude of the first amplificationunit 106 decreases slightly, and sufficient voltages cannot be writteninto the holding capacitances 213 and 214 as an electric current flowingthrough the first amplification unit 106 decreases. These factors canincrease noise. This, however, poses no serious problem because theallowable noise level range of a moving image to continuously view aplurality of images is wider than that of a still image.

That is, even when the written voltage in the moving image capturingmode is lower than that in the still image capturing mode, the imagequality does not visually significantly deteriorate. Signal waveforms VNand VS in FIG. 3 schematically show these states. The still imagecapturing mode is indicated by solid lines, and the moving imagecapturing mode is indicated by dotted lines.

Conversely, when the current consumption is suppressed relatively smallin the moving image capturing mode, the image quality improves. Settingthe reference currents to satisfy I2<I1 greatly reduces the currentconsumption per first amplification unit 106 (e.g., per column). Adigital camera which uses a total of more than 10,000,000 pixels will betaken as an example. If the number of columns exceeds 4,000 and thecurrent consumption is reduced by 5 μA per column, the overall currentconsumption can be decreased by 20 mA. Assuming that the power supplyvoltage is 5V, the overall power consumption can be decreased by 100 mW.Heat generated by a power consumption of this amount changes the imagequality significantly.

Especially when a still image is captured while capturing a movingimage, or when the so-called Live View photography in which a stillimage is captured while the photographer views a moving image in anelectronic viewfinder, the moving image capturing mode instantaneouslyswitches to the still image capturing mode. For this reason, a stillimage is captured before heat generated in the moving image capturingmode dies down. This may noticeably deteriorate the quality of the stillimage as random noise due to the heat generated in the moving imagecapturing mode has a large adverse influence on still image capturing inthe still image capturing mode. Suppressing the current consumption inthe moving image capturing mode can therefore improve the quality of astill image.

According to this embodiment, it is also possible to smoothly switchbetween the moving image capturing mode and the still image capturingmode because the clock rate remains the same.

FIG. 4 is a circuit diagram showing the schematic arrangement of asolid-state image sensing device according to the second embodiment ofthe present invention. Details which are not particularly referred to inthe arrangement according to the second embodiment can be the same as inthe first embodiment. The second embodiment is different from the firstembodiment in that a current control unit 112 controls a constantcurrent source 105 connected to a column signal line 102. Letting I3 bethe magnitude of an electric current flowing through the constantcurrent source 105 in the still image capturing mode, and I4 be themagnitude of an electric current flowing through the constant currentsource 105 in the moving image capturing mode, I3>I4.

FIG. 5 is a timing chart illustrating an example of the operation of thesolid-state image sensing device according to the second embodiment. Thebasic operation of the solid-state image sensing device according to thesecond embodiment is the same as that according to the first embodimentshown in FIG. 3. The timing charts shown in FIGS. 5 and 3 are differentin a change in voltage VN. In the first embodiment, the write speeds ofboth voltages VN and VS in the moving image capturing mode are lowerthan those in the still image capturing mode. In the second embodiment,an electric current flowing through the column signal line 102 in themoving image capturing mode is smaller than that in the still imagecapturing mode. Since a change in the voltage of the column signal line102 is very small during the write of a voltage VN, a firstamplification unit 106 determines the speed at which a voltage iswritten into a holding capacitance 213. This prevents a drop in writespeed. In contrast, the write speed of a voltage VS in the moving imagecapturing mode drops, like the first embodiment, as can be seen from achange in voltage VS indicated by a dotted line in FIG. 5. This isbecause the charge/discharge speed of a clamp capacitance (C0) 206drops. This, however, poses no serious problem because the allowablenoise level range of a moving image to continuously view a plurality ofimages is wider than that of a still image, as described in the firstembodiment. Like the first embodiment, suppressing the currentconsumption of the column signal line in the moving image capturing modemakes it possible to improve the image quality in the still imagecapturing mode.

The current control unit 112 may control both electric currents flowingthrough the first amplification unit 106 and constant current source 105in the moving image capturing mode to be smaller than those in the stillimage capturing mode by combining the first and second embodiments.

FIG. 6 is a circuit diagram showing the schematic arrangement of asolid-state image sensing device according to the third embodiment ofthe present invention. Details which are not particularly referred to inthe arrangement according to the third embodiment can be the same as inthe first embodiment.

In the third embodiment, a bypass route 610 for bypassing a firstamplification unit 106 is additionally connected between a column signalline 102 and a signal holding unit 107, and a transistor 602 isadditionally inserted in an inverting amplifier 207. In the thirdembodiment, a current control unit 603 is provided in place of thecurrent control unit 112. In the moving image capturing mode, thecurrent control unit 603 deactivates the first amplification unit 106and bypasses the first amplification unit 106 via the bypass route 610.In the still image capturing mode, the current control unit 603activates the first amplification unit 106 and shuts off the bypassroute 610.

The first amplification unit 106 is activated by activating thetransistor 602 and deactivated by deactivating the transistor 602 underthe control of the current control unit 603. The bypass route 610 isactivated by activating a transistor 601 inserted in the bypass route610, and then the first amplification unit 106 is bypassed via thebypass route 610. The bypass route 610 is shut off by deactivating thetransistor 601. This operation is controlled by the current control unit603.

FIG. 7 is a timing chart illustrating an example of the operation of thesolid-state image sensing device according to the third embodiment.Referring to FIG. 7, the operation in the still image capturing mode isindicated by solid lines, and the operation in the moving imagecapturing mode is indicated by broken lines.

The basic operation of the solid-state image sensing device according tothe third embodiment is the same as that according to the firstembodiment shown in FIG. 3. Mode signals PMS and /PMS are generated bythe current control unit 603. The mode signal /PMS is obtained byinverting the mode signal PMS. The mode signal PMS is set at low levelin the still image capturing mode, while it is set at high level in themoving image capturing mode.

In the still image capturing mode, the transistor 601 which controls thebypass route 610 is OFF, while the transistor 602 which controls theactivation/deactivation of the inverting amplifier 207 is ON. Therefore,in the still image capturing mode, the solid-state image sensing deviceshown in FIG. 6 operates in substantially the same manner as in thesolid-state image sensing device shown in FIG. 2.

In the moving image capturing mode, the transistor 601 which controlsthe bypass route 610 is ON, while the transistor 602 which controls theactivation/deactivation of the inverting amplifier 207 is OFF.Therefore, in the moving image capturing mode, no electric current flowsthrough the inverting amplifier 207 so that the current consumption canbe greatly reduced. By turning on the transistor 601, the column signalline 102 is directly connected to the signal holding unit 107. In themoving image capturing mode, since the inverting amplifier 207 is notused, a pulse PC0R is not used. Also in the moving image capturing mode,signals written into holding capacitances 213 and 214 are not invertedand amplified by the inverting amplifier 207.

An example of the operation in the moving image capturing mode will beexplained below. Referring to FIG. 7, at T=t1, a selection signal PSELinput to the gate of a selection transistor 205 changes to high level.An amplification transistor 203 is thus activated. In this state, an FD217 is reset by a reset voltage SVDD.

At T=t3, a reset signal PRES input to the gate of a reset transistor 204changes to low level. The potential of the FD 217 is then fixed to blacksignal level, and a reference voltage VN of the column signal line 102is determined.

At T=t5, a pulse PTS changes to high level. A switch 212 of the signalholding unit 107 is then turned on to start writing a reference signalVN into the holding capacitance 214. At T=t6, this write is ended. Inthis embodiment, a reference signal VN (N output) is written into theholding capacitance 214 and a signal VS (S output) is written into theholding capacitance 213 in the moving image capturing mode.

At T=t7, a transfer pulse PTX input to the gate of a transfer transistor202 in a pixel unit 101 changes to high level. The signal charge of aphotodiode 201 is then transferred to the FD 217. This transfer iscompleted before T=t8. At time T=t9, a pulse PTN changes to high level.The switch 211 of the signal holding unit 107 is then turned on to startwriting a signal VS into the holding capacitance 213.

The potential of the column signal line 102 changes from VN to VS as thetransfer pulse PTX is activated to high level. If the signal charge isan electron, VS<VN. The voltage value VS is directly written into theholding capacitance 213.

At T=t10, this write is ended. At T=t11, the reset signal PRES changesto high level. The reset transistor 204 of the pixel unit 101 is thenturned on to reset and the FD 217. At the same time, the selectionsignal PSEL changes to low level to turn off the selection transistor205. With this operation, row selection is canceled.

At T=t12, column selection switches 215 and 216 are turned on inaccordance with a pulse PH sent from a horizontal scanning circuit 108.A second amplification unit 110 calculates the difference between an Noutput and an S output, and outputs an image signal. At T=t13, thisoperation is ended and signals in the columns are sequentially output insynchronism with the pulse PH.

In the third embodiment, the first amplification unit is not used in themoving image capturing mode, so the gain is relatively low. To cope withthis situation, the second amplification unit 110 may multiply the imagesignal by a gain as needed.

According to the third embodiment, it is possible to greatly reduce thecurrent consumption of the first amplification unit in the moving imagecapturing mode. On the other hand, the arrangement according to thethird embodiment can be implemented by providing two switches for eachfirst readout circuit without largely changing the circuitry.

The arrangement according to the third embodiment can be used togetherwith that according to the second embodiment.

FIG. 8 is a circuit diagram showing the schematic arrangement of asolid-state image sensing device according to the fourth embodiment ofthe present invention. FIG. 9 is a timing chart illustrating an exampleof the operation of the solid-state image sensing device. The fourthembodiment has an arrangement in which the first amplification unit 106is omitted from the solid-state image sensing device according to thesecond embodiment shown in FIG. 4.

According to the first to fourth embodiments, it is possible to suppressthe current consumption in the moving image capturing mode to be smallerthan that in the still image capturing mode without changing the clockrate or readout rate between the moving image capturing mode and thestill image capturing mode.

FIG. 10 is a block diagram showing the schematic configuration of animage sensing system according to a preferred embodiment of the presentinvention. This image sensing system has the solid-state image sensingdevice 4 according to each of the above-described first to fourthembodiments.

An optical object image is formed on the image sensing plane of asolid-state image sensing device 4 by a lens 2. A barrier 1 which servesboth as a main switch and a protection of the lens 2 can be set outsidethe lens 2. A stop 3 for adjusting the amount of light which emergesfrom the lens 2 can be provided to the lens 2. Image sensing signalsoutput from the solid-state image sensing device 4 via a plurality ofchannels undergo various processes such as correction and clamp by animage sensing signal processing circuit 5. The image sensing signalsoutput from the image sensing signal processing circuit 5 via theplurality of channels are A/D-converted by an A/D converter 6. The imagedata output from the A/D converter 6 undergo various processes such ascorrection and data compression by a signal processing unit 7. Thesolid-state image sensing device 4, image sensing signal processingcircuit 5, A/D converter 6, and signal processing unit 7 operate inaccordance with timing signals generated by a timing generation unit 8.

The blocks 5 to 8 and the solid-state image sensing device 4 may beformed on the same chip. An overall control/arithmetic processing unit 9controls the blocks of the image sensing system. In addition to theseblocks, the image sensing system comprises a memory unit 10 fortemporarily storing image data, and a recording medium control interfaceunit 11 for recording or reading out an image on or from a recordingmedium. A detachable recording medium 12 includes, e.g., a semiconductormemory. The image sensing system may comprise an external interface(I/F) unit 13 for communicating with, e.g., an external computer.

The operation of the image sensing system shown in FIG. 10 will beexplained next. A main power supply, a power supply of a control system,and power supplies of image sensing system circuits such as the A/Dconverter 6 are sequentially turned on in accordance with the opening ofthe barrier 1. After that, the overall control/arithmetic processingunit 9 sets the stop 3 to a full-aperture state to control the exposureamount. A signal output from the solid-state image sensing device 4 issent to the A/D converter 6 through the image sensing signal processingcircuit 5. The A/D converter 6 A/D-converts the signal, and outputs theconverted signal to the signal processing unit 7. The signal processingunit 7 processes the received data and sends the processed data to theoverall control/arithmetic processing unit 9. The overallcontrol/arithmetic processing unit 9 performs arithmetic exposure amountdetermination processing. The overall control/arithmetic processing unit9 controls the stop 3 on the basis of the determined exposure amount.

The overall control/arithmetic processing unit 9 extracts high-frequencycomponents from the signal which is output from the solid-state imagesensing device 4 and processed by the signal processing unit 7, andcalculates the distance to an object on the basis of the high-frequencycomponents. After that, the overall control/arithmetic processing unit 9drives the lens 2 to determine whether it is in focus. If the lens 2 isout of focus, the overall control/arithmetic processing unit 9 drivesthe lens 2 again, and calculates the distance.

After the lens 2 is confirmed to be in focus, final exposure is started.After the exposure is ended, an image sensing signal output from thesolid-state image sensing device 4 undergoes various processes such ascorrection by the image sensing signal processing circuit 5, isA/D-converted by the A/D converter 6, and is processed by the signalprocessing unit 7. The image data processed by the signal processingunit 7 is accumulated in the memory unit 10 by the overallcontrol/arithmetic processing unit 9.

The image data accumulated in the memory unit 10 is recorded on therecording medium 12 via the recording medium control I/F unit 11 underthe control of the overall control/arithmetic processing unit 9. Theimage data can also be sent to, e.g., a computer via the external I/Funit 13 and processed by it.

While the present invention has been described with reference toexemplary embodiments, it is to be understood that the invention is notlimited to the disclosed exemplary embodiments. The scope of thefollowing claims is to be accorded the broadest interpretation so as toencompass all such modifications and equivalent structures andfunctions.

This application claims the benefit of Japanese Patent Application No.2007-121838, filed May 2, 2007, which is hereby incorporated byreference herein in its entirety.

1. A solid-state image sensing device which can capture a moving imageand a still image, comprising: a first readout circuit configured toread out a signal from a pixel array including a plurality of pixels; asignal holding unit configured to hold the signal read out from saidfirst readout circuit; a second readout circuit configured to read outthe signal held in said signal holding unit; and a current control unitconfigured to control an electric current flowing through at least partof said first readout circuit while said first readout circuit reads outthe signal, wherein said current control unit controls an electriccurrent flowing through said at least part of said first readout circuitin a moving image capturing mode to be smaller than an electric currentflowing through said at least part of said first readout circuit in astill image capturing mode.
 2. The device according to claim 1, whereinsaid at least part of said first readout circuit includes anamplification unit.
 3. The device according to claim 1 or 2, whereinsaid first readout circuit includes a column signal line, and reads outa signal from the pixel array via said column signal line, and said atleast part of said first readout circuit includes said column signalline.
 4. The device according to claim 1, wherein said first readoutcircuit includes an amplification unit, and a bypass route configured tobypass said amplification unit, and said current control unitdeactivates said amplification unit and bypasses said amplification unitvia said bypass route in the moving image capturing mode, and activatessaid amplification unit and shuts off said bypass route in the stillimage capturing mode.
 5. A solid-state image sensing device which cancapture a moving image and a still image, comprising: a pixel arrayincluding a plurality of pixels; a vertical scanning circuit configuredto select a row of said pixel array; a horizontal scanning circuitconfigured to select a column of said pixel array; a plurality of firstamplification circuits configured to amplify signals from said pixelarray; a plurality of constant current sources configured to determineelectric currents flowing through said plurality of first amplificationcircuits; a plurality of signal holding units configured to hold thesignals from said plurality of first amplification circuits; a pluralityof switches configured to transfer the signals, which are held in saidplurality of signal holding units, in accordance with a signal sent fromsaid horizontal scanning circuit; a second amplification circuitconfigured to amplify the signals transferred by said plurality ofswitches and output the amplified signals; and a current control unitconfigured to control the electric currents flowing through saidplurality of constant current sources, wherein said current control unitcontrols an electric current flowing through each of said constantcurrent sources in a moving image capturing mode to be smaller than anelectric current flowing through each of said constant current sourcesin a still image capturing mode, so that each of said firstamplification circuits operates with a lower driving capability in themoving image capturing mode than in the still image capturing mode. 6.The device according to claim 5, wherein each of said constant currentsources includes a first transistor, and said current control unitcontrols the electric current by controlling a voltage of a gate of saidfirst transistor.
 7. The device according to claim 6, wherein saidcurrent control unit includes a second transistor having a gate anddrain connected to each other, and a current mirror circuit is formed byconnecting the gate of said first transistor of each of said constantcurrent sources to the gate of said second transistor of said currentcontrol unit.
 8. The device according to claim 3, wherein each of saidfirst amplification circuits comprising: a clamp capacitance having oneend configured to receive a signal from an output line configured tooutput a signal from said pixel array; an inverting amplifier having afirst input terminal configured to receive the signal held in said clampcapacitance, a second input terminal configured to be applied with areference voltage, and an output terminal configured to output adifference between the reference voltage and the signal; a feedbackcapacitance connected between said first input terminal and said outputterminal of said inverting amplifier; and a clamp switch configured toconnect two ends of said feedback capacitance.
 9. A solid-state imagesensing device which can capture a moving image and a still image,comprising: a pixel array including a plurality of pixels; a verticalscanning circuit configured to select a row of said pixel array; ahorizontal scanning circuit configured to select a column of said pixelarray; a plurality of column signal lines to which signals from saidpixel array are output; a plurality of constant current sources each ofwhich are connected between the ground and a corresponding one of saidplurality of column signal lines; and a current control unit configuredto control electric currents flowing through said plurality of constantcurrent sources, wherein said current control unit controls an electriccurrent flowing through each of said constant current sources in amoving image capturing mode to be smaller than an electric currentflowing through each of said constant current sources in a still imagecapturing mode.
 10. The device according to claim 9, further comprisinga plurality of first amplification units configured to amplify thesignals output from said pixel array to said plurality of column signallines.
 11. The device according to claim 10, further comprising: aplurality of signal holding units configured to hold the signals fromsaid plurality of first amplification units; a plurality of switchesconfigured to transfer the signals, which are held in said plurality ofsignal holding units, in accordance with a signal sent from saidhorizontal scanning circuit; and a second amplification unit configuredto amplify the signals transferred by said plurality of switches andoutput the amplified signals.
 12. The device according to claim 9,further comprising: a plurality of signal holding units configured tohold the signals from said plurality of column signal lines; a pluralityof switches configured to transfer the signals, which are held in saidplurality of signal holding units, in accordance with a signal sent fromsaid horizontal scanning circuit; and an amplification unit configuredto amplify the signals transferred by said plurality of switches andoutput the amplified signals.
 13. The device according to claim 9,wherein each of said constant current sources includes a firsttransistor, and said current control unit controls the electric currentby controlling a voltage of a gate of said first transistor.
 14. Thedevice according to claim 13, wherein said current control unit includesa second transistor having a gate and drain connected to each other, anda current mirror circuit is formed by connecting the gate of said firsttransistor of each of said constant current sources to the gate of saidsecond transistor of said current control unit.
 15. The device accordingto claim 10, wherein each of said first amplification units comprises: aclamp capacitance having one end connected to a corresponding one ofsaid column signal lines; an inverting amplifier having a first inputterminal configured to receive a signal held in said clamp capacitance,a second input terminal configured to be applied with a referencevoltage, and an output terminal configured to output a differencebetween the reference voltage and the signal; a feedback capacitanceconnected between said first input terminal and said output terminal ofsaid inverting amplifier; and a clamp switch configured to connect twoends of said feedback capacitance.
 16. A solid-state image sensingdevice which can capture a moving image and a still image, comprising: apixel array including a plurality of pixels; a vertical scanning circuitconfigured to select a row of said pixel array; a horizontal scanningcircuit configured to select a column of said pixel array; a pluralityof column signal lines to which signals from said pixel array areoutput; a plurality of first amplification units configured to amplifythe signals output from said pixel array to said plurality of columnsignal lines; a plurality of signal holding units configured to hold thesignals from said plurality of first amplification units; a plurality ofswitches configured to transfer the signals, which are held in saidplurality of signal holding units, in accordance with a signal sent fromsaid horizontal scanning circuit; a second amplification unit configuredto amplify the signals transferred by said plurality of switches andoutput the amplified signals; a plurality of bypass routes configured tobypass said plurality of first amplification units between saidplurality of column signal lines and said plurality of signal holdingunits; and a control unit configured to deactivate said firstamplification units and bypass said first amplification units via saidbypass routes in a moving image capturing mode, and to activate saidfirst amplification units and shut off said bypass routes in a stillimage capturing mode.
 17. The device according to claim 16, wherein eachof said first amplification units comprising: a clamp capacitance havingone end connected to a corresponding one of said column signal lines; aninverting amplifier having a first input terminal configured to receivea signal held in said clamp capacitance, a second input terminalconfigured to be applied with a reference voltage, and an outputterminal configured to output a difference between the reference voltageand the signal; a transistor configured to control activation anddeactivation of a corresponding one of said first amplification units bycontrolling activation and deactivation of said inverting amplifier; afeedback capacitance connected between said first input terminal andsaid output terminal of said inverting amplifier; and a clamp switchconfigured to connect two ends of said feedback capacitance, whereinsaid control unit activates each of said first amplification units byturning on said transistor, and deactivates each of said firstamplification units by turning off said transistor.
 18. An image sensingsystem comprising: a solid-state image sensing device defined in claim1; and a signal processing unit configured to process a signal outputfrom said solid-state image sensing device.